NTZD3155CT2G ON Semiconductor, NTZD3155CT2G Datasheet - Page 4

• Manufacturer Part Number: NTZD3155CT2G
• Description: MOSFET N/P-CH COMPL 20V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3155CT2G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA, 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.8
1.6
1.4
1.2
0.8
0.6
0
2
1
-50
0
1
1
-25
Figure 5. On-Resistance Variation with
V
5.5 V
Figure 1. On-Region Characteristics
GS
V
N-CHANNEL TYPICAL PERFORMANCE CURVES
1.8 V
V
DS
GS
Figure 3. On-Resistance versus
T
2
= 2.0 V to 2.2 V
2
, DRAIN-TO-SOURCE VOLTAGE (V)
J
, GATE-T O-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
Gate-to-Source Voltage
3
25
Temperature
4
3
V
V
V
V
GS
GS
GS
GS
50
5
= 1.6 V
= 1.4 V
= 1.2 V
= 1.0 V
4
6
75
7
I
T
I
V
100
D
D
J
GS
T
= 0.54 A
= 0.54 A
= 25°C
J
5
= 4.5 V
8
= 25°C
http://onsemi.com
125
NTZD3155C
9
150
10
6
4
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
0
0.5
0.2
2
Figure 4. On-Resistance versus Drain Current
V
T
V
Figure 6. Drain-to-Source Leakage Current
J
DS
GS
(T
= 25°C
4
J
w 10 V
= 0 V
V
V
= 25°C unless otherwise noted)
Figure 2. Transfer Characteristics
DS
1.0
GS
0.4
, DRAIN-TO-SOURCE VOLTAGE (V)
6
, GATE-T O-SOURCE VOLTAGE (V)
V
GS
I
T
D
T
8
V
J
, DRAIN CURRENT (A)
V
= 1.8 V
J
and Gate Voltage
GS
versus Voltage
= 100°C
GS
1.5
0.6
T
= -55°C
J
= 2.5 V
T
= 4.5 V
= 150°C
10
J
= 25°C
12
0.8
2.0
14
T
J
= 100°C
16
2.5
1
18
3.0
1.2
20