TPC8405(TE12L,Q,M) Toshiba, TPC8405(TE12L,Q,M) Datasheet - Page 8

• Manufacturer Part Number: TPC8405(TE12L,Q,M)
• Description: MOSFET N/P-CH 30V SOP8 2-6J1E
• Manufacturer: Toshiba

Specifications of TPC8405(TE12L,Q,M)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1240pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 42 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Power Dissipation: 0.45 W, 0.75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-ch
100
0.1
10
20
10
16
12
8
6
4
2
0
8
4
0
1
0.1
0
0
3.4
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
3.6
3.8
6
10
Drain−source voltage V
Gate−source voltage V
−55°C
1
0.2
4
Drain current I
100
1
2
0.4
25
I
I
|Y
D
D
25°C
3.3
fs
– V
– V
| – I
3
GS
Ta = −55°C
DS
Ta = 100°C
3.2
D
0.6
D
10
4
GS
(A)
Common source
Ta = 25°C
Pulse test
DS
0.8
V GS = 2.6 V
(V)
(V)
5
3.1
2.9
2.8
2.7
3
100
1.0
6
8
1000
100
0.6
0.5
0.4
0.2
0.1
0.3
20
16
12
10
8
4
0
0
1
0
0
1
10
4
6
Drain−source voltage V
Gate−source voltage V
1.5
2
3.8
1
3.6
Drain current I
4
R
V
DS (ON)
2
I
DS
D
– V
10
– V
V GS = 4.5 V
6
V GS = 10 V
3.4
DS
GS
– I
3
D
D
8
GS
(A)
DS
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
3.3
Common source
Ta = 25°C
Pulse test
3.2
V GS = 2.6 V
4
(V)
(V)
2009-09-29
3.1
10
TPC8405
I D = 6 A
2.9
3
2.8
2.7
3
100
12
5