TPC8405(TE12L,Q,M) Toshiba, TPC8405(TE12L,Q,M) Datasheet - Page 10

• Manufacturer Part Number: TPC8405(TE12L,Q,M)
• Description: MOSFET N/P-CH 30V SOP8 2-6J1E
• Manufacturer: Toshiba

Specifications of TPC8405(TE12L,Q,M)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1240pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 42 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Power Dissipation: 0.45 W, 0.75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-ch
100
0.1
10
1
0.1
Single-device value at dual
operation (Note 3b)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature
I D max (Pulse) *
Ta = 25°C
Drain−source voltage V
1000
100
Safe operating area
0.1
10
0.001
1
1
Single pulse
10 ms*
V DSS max
0.01
10
DS
1 ms*
(V)
0.1
100
Pulse width t
r
th
10
− t
1
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
w
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
(s)
10
100
(4)
(3)
(2)
(1)
1000
2009-09-29
TPC8405