TPCP8401(TE85L,F) Toshiba, TPCP8401(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPCP8401(TE85L,F)
• Description: MOSFET N/P-CH 20V 2-3V1G
• Manufacturer: Toshiba

Specifications of TPCP8401(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 100mA, 5.5A
• Vgs(th) (max) @ Id: 1.1V @ 100µA
• Input Capacitance (ciss) @ Vds: 9.3pF @ 3V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Precaution
100 µA for this product. For normal switching operation, V
requires a lower voltage than V
product is 1.5 V or higher.
V
Be sure to take this into consideration when using the device. The V
N-ch
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Switching time
Input capacitance
Reverse transfer capacitance
Output capacitance
th
can be expressed as the voltage between the gate and source when the low operating current value is I
Characteristics
Turn-on time
Turn-off time
th
. (The relationship can be established as follows: V
V
R
Symbol
( BR ) DSS
DS (ON)
I
I
C
|Y
C
C
GSS
DSS
V
t
t
on
off
oss
iss
rss
th
fs
|
V
V
I
V
V
V
V
V
Duty < = 1%, t
V
D
V
GS
DS
DS
GS
GS
GS
DS
DS
GS
= 0.1 mA, V
4
2.5 V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= ±10 V, V
= 1.5 V, I
= 2.5 V, I
= 4 V, I
0 V
GS (on)
Test Condition
D
D
D
w
GS
D
D
GS
= 0.1 mA
= 10 mA
= 10 mA
= 10 µs
GS
DS
requires a higher voltage than V
= 1 mA
= 10 mA
= 0 V, f = 1 MHz
= 0 V
= 0 V
V
= 0 V
I
D
GS
DD
= 10 mA
∼ − 3 V
recommended voltage for turning on this
V
OUT
GS (off)
Min
0.6
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
< V
Typ.
th
125
5.2
2.2
1.5
9.3
4.5
9.8
70
⎯
⎯
⎯
⎯
⎯
< V
TPCP8401
th
GS (on).)
2006-11-13
Max
1.1
±1
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
and V
1
4
3
GS (off)
Unit
mS
µA
µA
pF
ns
V
V
Ω
D
=