TPCP8401(TE85L,F) Toshiba, TPCP8401(TE85L,F) Datasheet

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TPCP8401(TE85L,F)

Manufacturer Part Number
TPCP8401(TE85L,F)
Description
MOSFET N/P-CH 20V 2-3V1G
Manufacturer
Toshiba
Datasheet

Specifications of TPCP8401(TE85L,F)

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
100mA, 5.5A
Vgs(th) (max) @ Id
1.1V @ 100µA
Input Capacitance (ciss) @ Vds
9.3pF @ 3V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
○ Switching Regulator Applications
○ Load Switch Applications
Absolute Maximum Ratings
P-ch
High forward transfer admittance
Lead(Pb)-Free
Multi-chip discrete device; built-in P channel MOS FET for main
switch and N Channel MOS FET for drive
Small footprint due to small and thin package
Low drain-source ON resistance
: P Channel R
Low drain-source ON resistance
: P Channel |Y
Low leakage current
: P Channel I
Enhancement−mode
: P Channel V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ)
Characteristics
DSS
DS (ON)
th
fs
= −0.5 to −1.2 V (V
| = 13 S (typ.)
(Note 2a) (Note 4)
= −10 µA (V
GS
DC
Pulse (Note 1)
= 20 kΩ)
= 31 mΩ (typ.)
(Note 2a)
(Note 2b)
(Note 1)
(Note 3)
(t = 5 s)
(t = 5 s)
DS
= −12 V)
DS
(Ta = 25°C)
Symbol
V
V
V
TPCP8401
E
E
= −10 V, I
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AR
AS
D
ch
D
D
D
= −200 µA)
Rating
−22.0
−5.5
1.96
−2.8
0.22
−12
−12
150
1.0
5.3
±8
1
Unit
mJ
mJ
°C
W
W
V
V
V
A
A
Weight: 0.017 g (typ.)
Circuit Configuration
Marking
JEDEC
JEITA
TOSHIBA
1.Source(Nch)
2.Drain(Pch)
3.Drain(Pch)
4.Drain(Pch)
0.475
8
S
1
8
1
0.33±0.05
8
1
8401
0.65
0.025
7
(Note5)
2.9±0.1
2
2
0.17±0.02
5.Gate(Pch)
6.Source(Pch)
7.Gate(Nch)
8.Drain(Nch)
7
0.05
S
M
2-3V1G
6
TPCP8401
5
4
Lot No.
A
3
2006-11-13
6
3
B
0.28
1.12
1.12
0.28
A
0.8±0.05
5
Unit: mm
+0.1
+0.13
+0.13
+0.1
-0.11
-0.12
-0.12
-0.11
0.05
4
5
4
M
B

Related parts for TPCP8401(TE85L,F)

TPCP8401(TE85L,F) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ) ○ Switching Regulator Applications ○ Load Switch Applications • Lead(Pb)-Free • Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive • ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 3

Electrical Characteristics P-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...

Page 4

N-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Turn-on time Switching time Turn-off time Input capacitance Reverse transfer capacitance Output capacitance Precaution V can be expressed as the ...

Page 5

Pch I – −5 −1.8 −5 −1.9 −2.5 −2 −4 −3 −4, −4.5 −3 −2 −1 Common source Ta = 25°C Pulse test 0 −0.4 −0.8 −1.2 0 Drain-source voltage – ...

Page 6

R – (ON) 160 Common source Pulse test 120 −2 −5 −1 −1.4A −2.5 V −2 −1. −1.4 A, −2.8 ...

Page 7

Device mounted on a glass- epoxy board (b) (Note 2b) 100 0.3 0.1 0.001 0.01 Safe operating area −100 − max (pulsed)* 1 ms* −10 10 ms* −3 −1 −0.3 −0.1 −0.03 ...

Page 8

Nch I – 250 Common source 2 25° 2.3 200 10 2.1 150 100 0.5 1 1.5 Drain-source voltage – (ON Common source ...

Page 9

500 Common source 300 25°C 100 100 Drain current I (mA) D Capacitance – 100 50 10 ...

Page 10

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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