VKM60-01P1 IXYS, VKM60-01P1 Datasheet - Page 3

• Manufacturer Part Number: VKM60-01P1
• Description: MOSFET H-BRIDGE 100V ECO-PAC2
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of VKM60-01P1

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: ECO-PAC2
• Vdss, Max, (v): 100
• Id25, Tc = 25°c, (a): 75
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): -
• Rds(on), Max, Tj = 25°c, (mohms): 25
• Tf, Typ, (ns): 60
• Tr, Typ, (ns): 60
• Rthjc, Max, (ºc/w): 0.50
• Package Style: ECO-PAC 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
200
150
100
1,4
1,3
1,2
1,1
1,0
0,9
0,8
50
80
60
40
20
0
0
-50 -25
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
T
J
T
= 25°C
20
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs. Case Temperature
J
= 25°C
40
0
DS(on)
T
60
25
I
C
D
V
- Degrees C
- Amperes
DS
vs. Drain Current
80
50
- Volts
V
GS
100 120 140 160
75
= 10V
V
GS
100 125 150
V
= 15V
GS
= 10V
8V
9V
6V
5V
7V
2,50
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
150
125
100
1,2
1,1
1,0
0,9
0,8
0,7
0,6
0,5
75
50
25
0
-50
-50
0
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
1
-25
-25
V
GS(th)
2
of Drain to Source Resistance
Breakdown and Threshold Voltage
0
0
3
T
T
T
J
25
25
J
J
= 125°C
V
4
- Degrees C
- Degrees C
GS
I
D
= 37.5A
50
50
- Volts
5
VKM 60-01P1
6
75
75
T
J
= 25°C
7
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 4