VKM60-01P1 IXYS, VKM60-01P1 Datasheet

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VKM60-01P1

Manufacturer Part Number
VKM60-01P1
Description
MOSFET H-BRIDGE 100V ECO-PAC2
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of VKM60-01P1

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
ECO-PAC2
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
75
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
25
Tf, Typ, (ns)
60
Tr, Typ, (ns)
60
Rthjc, Max, (ºc/w)
0.50
Package Style
ECO-PAC 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VKM60-01P1
Manufacturer:
FAIRCHILD
Quantity:
228
HiPerFET
H-Bridge Topology in ECO-PAC 2
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
Symbol
V
V
I
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
© 2005 IXYS All rights reserved
MOSFETs
D25
DM
AR
GSS
DSS
d(off)
d(on)
r
f
fs
DGR
GS
GSM
AR
D
GS(th)
DSS
DSS
DS(on)
iss
oss
g(on)
gd
thJC
thCK
rss
gs
Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Conditions
V
V
V
V
V
V
Pulse test, t < 300 µs, duty cycle d < 2%
V
V
V
R
V
with heatsink compound (0.42 K/m.K; 50 µm)
S
J
J
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
DS
GS
GS
GS
G
≤ I
= 25°C to 150°C
= 25°C to 150°C; R
≤ 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 2 Ω, (External)
= V
= 0.8 • V
= 10 V; I
= 0 V, I
= ±20 V
= 0 V;
= 10 V, I
= 0 V, V
= 10 V, V
= 10 V, V
DM
TM
, di/dt ≤ 100 A/µs, V
GS
rr
, HDMOS
, I
D
D
Power MOSFET
DC
DS
D
D
= 4 mA
= 250 µA
DSS
DS
DS
, V
= 0.5 I
G
= I
= 25 V, f = 1 MHz
; T
= 2 Ω
= 0.5 • V
= 0.5 • V
T
D25
DS
J
J
, pulse test
= 0
= 125°C
= 25°C
D25
TM
GS
DSS
DSS
= 1 MΩ
Family
DD
, I
, I
D
D
≤ V
(T
= 0.5 I
= 0.5 I
J
DSS
= 25°C, unless otherwise specified)
,
JM
D25
D25
NTC
min.
100
2.0
Characteristic Values
25
K 12
K 13
Maximum Ratings
4500
1600
R 18
typ.
0.25
P 18
X 15
T 18
V 18
X 18
800
180
L 4
L 6
L 9
30
20
60
80
60
36
85
100
100
±20
±30
300
300
75
75
30
5
max.
±100
250
110
110
260
160
0.5 K/W
25
30
90
70
4
1
E10
F10
K10
A1
V/ns
K/W
mΩ
mA
mJ
nC
nC
nC
nA
µA
pF
pF
pF
ns
ns
ns
ns
W
V
V
V
V
A
A
A
V
V
S
I
V
R
t
Features
• HiPerFET
• ECO-PAC 2 package
Applications
• drives and power supplies
• battery or fuel cell powered
• automotive, industrial vehicle etc.
• secondary side of mains power
IXYS reserves the right to change limits,
test conditions and dimensions.
D25
rr
- low R
- low gate charge for high frequency
- unclamped inductive switching (UIS)
- dv/dt ruggedness
- fast intrinsic reverse diode
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- solderable pins for PCB mounting
supplies
DSS
DSon
operation
capability
DSon
= 75 A
= 100 V
= 25 mΩ Ω Ω Ω Ω
< 200 ns
TM
technology
VKM 60-01P1
Pin arangement see outlines
1 - 4

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VKM60-01P1 Summary of contents

Page 1

... V • automotive, industrial vehicle etc • secondary side of mains power supplies nA 250 µ mΩ 110 ns 110 260 160 nC 0.5 K/W IXYS reserves the right to change limits, K/W test conditions and dimensions. Pin arangement see outlines ...

Page 2

... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 3

... I - Amperes D Fig vs. Drain Current DS(on -50 - Degrees C C Fig. 5 Drain Current vs. Case Temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 150 V = 10V GS 125 9V 100 2,50 2,25 2,00 1,75 1,50 1,25 = 15V 1,00 ...

Page 4

... D=0.5 0,1 D=0.2 D=0.1 D=0.05 0,01 D=0.02 D=0.01 Single pulse 0,001 0,00001 0,0001 Fig.11 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved C iss C oss C rss 20 25 0,001 0,01 Time - Seconds ...

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