IRF7351PBF International Rectifier, IRF7351PBF Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
IRF7351PBF
Manufacturer Part Number
IRF7351PBF
Description
MOSFET N-CH 60V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7351TRPBF.pdf
(10 pages)
Specifications of IRF7351PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.8 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1330pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
24 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Control FET
P
P
Power MOSFET Selection for Non-Isolated DC/DC Converters
loss
8
loss
This can be expanded and approximated by;
= I
+ I ×
+ Q
+
= P
(
⎛
⎜
⎝
(
⎛
⎝
Q
rms
conduction
g
2
oss
× V
2
Q
× R
i
× V
g
gd
g
× f
ds(on )
in
× V
+ P
× f
)
in
)
switching
× f
⎞
⎠
⎞
⎟ + I ×
⎠
+ P
⎛
⎜
⎝
drive
Q
+ P
i
gs 2
g
× V
output
in
× f
⎞
⎟
⎠
Synchronous FET
by;
*dissipated primarily in Q1.
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
verse recovery charge Q
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
of the converter and therefore sees transitions be-
tween ground and V
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
potential for Cdv/dt turn on.
Figure A: Q
P
P
loss
loss
The power loss equation for Q2 is approximated
For the synchronous MOSFET Q2, R
The drain of Q2 is connected to the switching node
= P
= I
+ Q
+
(
(
⎛
⎜
⎝
conduction
rms
Q
oss
g
2
oss
2
× V
Characteristic
gd
× R
/Q
× V
gs1
g
+ P
ds(on)
× f
in
must be minimized to reduce the
in
. As Q1 turns on and off there is
drive
× f
)
)
rr
⎞
⎠
+ P
both generate losses that
+ Q
output
(
*
rr
× V
www.irf.com
in
ds(on)
× f
oss
is an im-
and re-
)