IRF7351PBF International Rectifier, IRF7351PBF Datasheet - Page 7
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IRF7351PBF
Manufacturer Part Number
IRF7351PBF
Description
MOSFET N-CH 60V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7351TRPBF.pdf
(10 pages)
Specifications of IRF7351PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.8 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1330pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
24 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
+
-
12V
Fig 17a. Gate Charge Test Circuit
V
GS
D.U.T
Same Type as D.U.T.
Current Regulator
.2µF
Fig 16.
+
-
50KΩ
3mA
•
•
•
•
Current Sampling Resistors
SD
.3µF
I
•
•
•
G
D.U.T.
-
G
I
D
HEXFET
+
+
-
V
DS
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 17b. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Period
Qgd
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
V
V
I
SD
Vgs
GS
DD
=10V
7
Id