IRF9910PBF International Rectifier, IRF9910PBF Datasheet - Page 5

• Manufacturer Part Number: IRF9910PBF
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9910PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A, 12A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.3 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 4.5 ns, 7.5 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns, 14 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Typical Source-Drain Diode Forward Voltage
Fig 13. Normalized On-Resistance
1.5
1.0
0.5
100
10
40
35
30
25
20
15
10
1
0
5
0
-60 -40 -20 0 20 40 60 80 100120140160
0.2
2
I
V
D
GS
0.4
= 10A
3
V GS, Gate -to -Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
= 10V
T J , Junction Temperature (°C)
Q1 - Control FET
T
J
4
= 150°C
0.6
5
0.8
T J = 25°C
T
J
6
= 25°C
1.0
T
J
7
= 125°C
1.2
I
V
D
8
GS
= 10A
= 0V
1.4
9
1.6
10
Typical Characteristics
Fig 14. Normalized On-Resistance
1.5
1.0
0.5
100
10
25
20
15
10
1
0
5
0
-60 -40 -20 0 20 40 60 80 100120140160
0.2
2
Q2 - Synchronous FET
I
V
D
GS
= 12A
0.4
3
V GS, Gate -to -Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
= 10V
T J , Junction Temperature (°C)
T
J
= 150°C
4
0.6
5
0.8
T
J
T
J
= 25°C
6
= 25°C
1.0
T
J
7
= 125°C
1.2
V
I D = 12A
8
GS
= 0V
1.4
9
1.6
10
5