IRF9910PBF International Rectifier, IRF9910PBF Datasheet - Page 2

• Manufacturer Part Number: IRF9910PBF
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9910PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A, 12A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.3 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 4.5 ns, 7.5 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns, 14 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
Static @ T
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
GS(th)
AS
SD
DS(on)
iss
oss
rss
g
sw
oss
rr
2
Q
Q
Q
Q
DSS
GS(th)
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Param eter
Ù
Parameter
gs2
Parameter
™
+ Q
gd
)
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
1.65
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
19
27
0.0061
0.014
1860
Typ.
Typ.
10.7
14.6
0.85
–––
–––
-4.9
-5.0
–––
–––
–––
–––
–––
–––
900
290
600
140
310
–––
–––
–––
–––
–––
7.4
9.1
7.4
2.6
4.3
1.4
2.5
5.4
1.5
3.9
3.4
6.8
4.0
8.7
6.3
8.3
9.2
4.5
7.5
3.1
4.9
15
10
14
15
11
16
Max.
Max.
13.4
18.3
11.3
2.55
-100
–––
–––
–––
–––
–––
100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
9.3
1.0
2.5
1.0
1.0
4.7
7.3
–––
–––
11
23
83
98
17
24
mV/°C
Units
Units
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
Q1
V
V
Q2
V
V
V
Q1
V
I
Q2
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
Q1 T
Q2 T
D
D
J
J
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
DS
GS
DS
GS
DS
DD
DD
GS
DS
Q1 Max.
= 8.3A
= 9.8A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= 10V, I
= 4.5V, I
= V
= 16V, V
= 16V, V
= 20V
= -20V
= 10V, I
= 10V, I
= 10V
= 4.5V, I
= 10V
= 4.5V, I
= 10V, V
= 16V, V
= 16V, V
= 0V
= 10V
V
V
8.3
33
J
J
DD
DD
= 25°C, I
= 25°C, I
GS
= 10V, di/dt = 100A/µs
= 10V, di/dt = 100A/µs
, I
D
D
S
S
D
D
D
D
= 250µA
D
D
D
D
GS
GS
GS
GS
GS
= 8.3A, V
= 9.8A, V
= 250µA
= 8.3A
= 9.8A
= 10A
= 12A
Conditions
Conditions
= 8.3A
= 9.8A
= 8.3A
= 9.8A
Q2 Max.
= 0V
= 0V, T
= 0V
= 4.5V
= 4.5V
F
F
= 8.3A,
= 9.8A,
www.irf.com
9.8
26
D
e
e
e
e
= 1mA
GS
GS
J
= 125°C
= 0V
= 0V
G
e
e
Units
e
e
mJ
A
D
S