IRF7304PBF International Rectifier, IRF7304PBF Datasheet - Page 5
![MOSFET 2P-CH 20V 4.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7304PBF
Manufacturer Part Number
IRF7304PBF
Description
MOSFET 2P-CH 20V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF7304TRPBF.pdf
(9 pages)
Specifications of IRF7304PBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
610pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
140 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
33 ns
Gate Charge Qg
14.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
26 ns
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.09Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7304PBF
Manufacturer:
IR
Quantity:
20 000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.0001
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
t
≤ 0.1 %
≤ 1
r
J
DM
x Z
1
thJA
P
2
10
DM
+ T
t
d(off)
A
t
1
t
t
2
f
+
-
100