IRF7304PBF International Rectifier, IRF7304PBF Datasheet - Page 3
![MOSFET 2P-CH 20V 4.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7304PBF
Manufacturer Part Number
IRF7304PBF
Description
MOSFET 2P-CH 20V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF7304TRPBF.pdf
(9 pages)
Specifications of IRF7304PBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
610pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
140 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
33 ns
Gate Charge Qg
14.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
26 ns
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.09Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7304PBF
Manufacturer:
IR
Quantity:
20 000
100
100
0.1
0.1
10
10
1
1
0.01
1.5
TOP
BOTTOM - 1.5V
2.0
-V
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
GS
DS
T = 25°C
0.1
J
, Drain-to-Source Voltage (V)
2.5
, Gate-to-Source Voltage (V)
3.0
1
3.5
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
-1.5V
= -15V
T = 150°C
J
4.0
10
4.5
100
5.0
A
A
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
0.01
-60
TOP
BOTTOM - 1.5V
I
D
-40
= -3.6A
T , Junction Temperature (°C)
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
-20
J
VGS
DS
0.1
, Drain-to-Source Voltage (V)
0
20
40
1
60
20µs PULSE WIDTH
T = 150°C
J
-1.5V
80
100 120 140 160
10
V
GS
= -4.5V
100
A
A