SP8M2FU6TB Rohm Semiconductor, SP8M2FU6TB Datasheet - Page 3
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SP8M2FU6TB
Manufacturer Part Number
SP8M2FU6TB
Description
MOSFET N/P-CH 30V 3.5A 8SOIC
Manufacturer
Rohm Semiconductor
Datasheet
1.SP8M2FU6TB.pdf
(4 pages)
Specifications of SP8M2FU6TB
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
83 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
3.5nC @ 5V
Input Capacitance (ciss) @ Vds
140pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
P-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−1.0
Min.
−30
1.8
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
100
120
490
110
5.5
1.5
2.0
65
75
10
15
35
10
−
−
−
−
−
−
Max.
Max.
−1.2
−2.5
± 10
140
165
7.7
−1
90
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
L
= −1.6A, V
= −1mA, V
= −3.5A, V
= −1.75A, V
= −1.75A, V
= −1.75A
= −3.5A
= 8.57Ω
= 4.29Ω, R
= 10Ω
= −30V, V
= −10V, I
= −10V, I
= −10V
= ± 20V, V
= 0V
= −10V
−15V, V
−15 V
Conditions
Conditions
GS
GS
GS
D
D
G
GS
GS
GS
DS
= −1mA
= −1.75A
GS
= 10Ω
=0V
= −10V
=0V
=0V
= −4.5V
= −4V
=0V
= −5V
Rev.A
SP8M2
3/3