SP8M2FU6TB Rohm Semiconductor, SP8M2FU6TB Datasheet
SP8M2FU6TB
Specifications of SP8M2FU6TB
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SP8M2FU6TB Summary of contents
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Transistors 4V Drive Nch+Pch MOSFET SP8M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Applications Switching Package specifications Package Taping Type Code Basic ordering unit ...
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Transistors N-ch Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance ...
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Transistors P-ch Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...