SI9945AEY-T1 Vishay, SI9945AEY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI9945AEY-T1
• Description: MOSFET DUAL P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI9945AEY-T1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4552539A

Si9945AEY/SQ9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70758.
www.vishay.com
4
- 0.3
- 0.6
- 0.9
30
10
0.6
0.3
0.0
1
0.01
- 50 - 25
0.1
0
2
1
10
Source-Drain Diode Forward Voltage
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.3
V
T
SD
0
J
= 175 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
25
J
- Temperature (°C)
0.6
10
I
D
-3
= 250 µA
50
75
0.9
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
T
J
10
= 25 °C
-2
125
1.2
150
Square Wave Pulse Duration (sec)
175
1.5
10
-1
120
1
0.20
0.16
0.12
0.08
0.04
90
60
30
0.001
0
0
0
On-Resistance vs. Gate-to-Source Voltage
0.01
I
D
2
V
= 3.7 A
GS
10
- Gate-to-Source Voltage (V)
Single Pulse Power
0.1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
4
- T
t
1
A
1
= P
t
S-61010-Rev. D, 12-Jun-06
2
Document Number: 70758
10
DM
+2
Z
6
thJA
t
t
thJA
1
2
10
(t)
= 93 °C/W
8
100
10
+3
1000
10