SI9945AEY-T1 Vishay, SI9945AEY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI9945AEY-T1
• Description: MOSFET DUAL P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI9945AEY-T1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4552539A

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 70758
S-61010-Rev. D, 12-Jun-06
0.20
0.16
0.12
0.08
0.04
10
25
20
15
10
8
6
4
2
0
0
5
0
0
0
0
V
I
D
DS
= 3.7 A
On-Resistance vs. Drain Current
= 30 V
2
5
V
1
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
10
4
2
V
GS
V
GS
= 4.5 V
V
15
GS
6
= 10 through 5 V
3
= 10 V
4 V
3 V
20
8
4
10
25
5
800
600
400
200
2.4
2.0
1.6
1.2
0.8
0.4
25
20
15
10
0
5
0
0
- 50 - 25
0
0
Si9945AEY/SQ9945AEY
C
On-Resistance vs. Junction Temperature
V
I
rss
D
GS
= 3.7 A
10
1
= 10 V
V
V
DS
GS
0
Transfer Characteristics
T
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
J
25
- Junction Temperature (°C)
20
2
Capacitance
C
T
oss
C
50
= - 55 °C
25 °C
30
3
Vishay Siliconix
75
C
iss
100
40
4
www.vishay.com
125
150 °C
50
5
150
175
60
6
3