SI7540DP-T1-E3 Vishay, SI7540DP-T1-E3 Datasheet - Page 4
![MOSFET N/P-CH 12V PWRPAK 8-SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SI7540DP-T1-E3
Manufacturer Part Number
SI7540DP-T1-E3
Description
MOSFET N/P-CH 12V PWRPAK 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7540DP-T1-GE3.pdf
(9 pages)
Specifications of SI7540DP-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 11.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
7.6A, 5.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.017 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
11.8A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
17mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7540DP-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7540DP-T1-E3
Manufacturer:
VISHAY
Quantity:
3 030
Part Number:
SI7540DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7540DP
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
20
10
0.4
0.2
0.0
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
T
- Temperature (°C)
25
J
= 150 °C
50
0.6
I
D
= 250 μA
75
0.8
0.01
100
0.1
10
T
100
Limited by R
1
0.1
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
Limited
1.0
I
125
D(on)
Single Pulse
T
A
DS(on)
V
= 25 °C
150
DS
1.2
- Drain-to-Source Voltage (V)
BVDSS Limited
1
I
DM
10
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
8
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
0.1
100
= 5 A
1
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
2
1
Time (s)
S09-0227-Rev. F, 09-Feb-09
I
D
Document Number: 71911
= 11.8 A
3
10
4
100
600
5