SI7540DP-T1-E3 Vishay, SI7540DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7540DP-T1-E3
• Description: MOSFET N/P-CH 12V PWRPAK 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7540DP-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.6A, 5.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.017 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 11.8A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7540DP-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71911
S09-0227-Rev. F, 09-Feb-09
0.05
0.04
0.03
0.02
0.01
0.00
20
16
12
8
4
0
5
4
3
2
1
0
0.0
0
0
V
I
D
0.5
DS
= 11.8 A
On-Resistance vs. Drain Current
= 6 V
V
4
V
3
GS
DS
1.0
Q
Output Characteristics
= 5 V thru 2.5 V
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
1.5
- Drain Current (A)
Gate Charge
8
6
2.0
12
9
2.5
V
V
GS
GS
1.5 V
3.0
= 2.5 V
= 4.5 V
2 V
16
12
3.5
4.0
20
15
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 1 1.8 A
2
= 4.5 V
0.5
V
GS
T
V
Transfer Characteristics
0
J
C
DS
- Junction T emperature (°C)
rss
- Gate-to-Source Voltage (V)
4
- Drain-to-Source Voltage (V)
25
Capacitance
1.0
T
25 °C
C
50
C
= 125 °C
C
Vishay Siliconix
6
oss
iss
1.5
75
Si7540DP
8
100
www.vishay.com
- 55 °C
2.0
10
125
150
150
2.5
12
3