SI7540DP-T1-E3 Vishay, SI7540DP-T1-E3 Datasheet - Page 3
![MOSFET N/P-CH 12V PWRPAK 8-SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SI7540DP-T1-E3
Manufacturer Part Number
SI7540DP-T1-E3
Description
MOSFET N/P-CH 12V PWRPAK 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7540DP-T1-GE3.pdf
(9 pages)
Specifications of SI7540DP-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 11.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
7.6A, 5.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.017 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
11.8A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
17mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7540DP-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7540DP-T1-E3
Manufacturer:
VISHAY
Quantity:
3 030
Part Number:
SI7540DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71911
S09-0227-Rev. F, 09-Feb-09
0.05
0.04
0.03
0.02
0.01
0.00
20
16
12
8
4
0
5
4
3
2
1
0
0.0
0
0
V
I
D
0.5
DS
= 11.8 A
On-Resistance vs. Drain Current
= 6 V
V
4
V
3
GS
DS
1.0
Q
Output Characteristics
= 5 V thru 2.5 V
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
1.5
- Drain Current (A)
Gate Charge
8
6
2.0
12
9
2.5
V
V
GS
GS
1.5 V
3.0
= 2.5 V
= 4.5 V
2 V
16
12
3.5
4.0
20
15
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 1 1.8 A
2
= 4.5 V
0.5
V
GS
T
V
Transfer Characteristics
0
J
C
DS
- Junction T emperature (°C)
rss
- Gate-to-Source Voltage (V)
4
- Drain-to-Source Voltage (V)
25
Capacitance
1.0
T
25 °C
C
50
C
= 125 °C
C
Vishay Siliconix
6
oss
iss
1.5
75
Si7540DP
8
100
www.vishay.com
- 55 °C
2.0
10
125
150
150
2.5
12
3