ZXMN6A09DN8TC Diodes Zetex, ZXMN6A09DN8TC Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A09DN8TC
• Description: MOSFET DUAL N-CHAN 60V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A09DN8TC

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 1407pF @ 40V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
Notes:
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
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Min
4 of 8
1.0
60
⎯
⎯
⎯
⎯
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⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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0.067
0.100
0.88
19.2
30.3
44.2
24.1
12.3
Typ
459
6.6
3.7
5.8
1.4
1.9
2.6
2.1
4.6
⎯
⎯
⎯
⎯
0.080
0.150
±100
Max
0.5
1.2
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
T
V
f = 1MHz
V
V
V
I
D
D
S
F
D
J
DS
GS
GS
GS
DS
DS
GS
GS
DD
= 1.4A, di/dt = 100A/μs,
= 4A, V
= 250μA, V
= 250μA, V
= 1.5A, R
= 25°C
= 60V, V
= 15V, I
= 40V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 4.5V
= 10V
= 30V, V
Test Condition
GS
ZXMN6A08E6
G
D
D
D
= 0V, T
GS
GS
GS
GS
DS
≅ 6.0Ω
= 4.8A
= 4.8A
DS
= 4.2A
= 0V
= 0V
= 10V
= 0V
= V
= 0V
V
I
© Diodes Incorporated
D
DS
GS
J
= 1.4A
= 25°C
= 30V
August 2010