ZXMN6A09DN8TC Diodes Zetex, ZXMN6A09DN8TC Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A09DN8TC
• Description: MOSFET DUAL N-CHAN 60V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A09DN8TC

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 1407pF @ 40V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
Notes:
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
measured when operating in a steady-state condition.
Characteristic
Characteristic
@T
V
V
GS
GS
A
= 25°C unless otherwise specified
= 10V
= 10V
@T
A
= 25°C unless otherwise specified
(Note 3)
T
(Note 2)
(Note 4)
(Note 3)
(Note 4)
(Note 2)
(Note 3)
(Note 1)
(Note 3)
A
= 70°C (Note 3)
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Symbol
Symbol
T
J
V
R
V
, T
I
I
P
DSS
I
DM
SM
I
θ JA
GS
D
S
D
STG
Diodes Incorporated
A Product Line of
-55 to 150
Value
Value
13.6
±20
113
3.5
2.8
2.6
1.1
8.8
1.7
2.8
60
16
16
73
ZXMN6A08E6
© Diodes Incorporated
mW/°C
°C/W
Unit
Unit
°C
W
V
V
A
A
A
A
August 2010