ZXMN2A04DN8TC Diodes Zetex, ZXMN2A04DN8TC Datasheet - Page 4

MOSFET DUAL N-CHAN 20V 8SOIC

ZXMN2A04DN8TC

Manufacturer Part Number
ZXMN2A04DN8TC
Description
MOSFET DUAL N-CHAN 20V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN2A04DN8TC

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 5.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.9A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
40.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
1880pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN2A04DN8TC
Manufacturer:
DIODES/美台
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1) Measured under pulsed conditions. Width=300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A04DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
A
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
2% .
4
MIN.
0.7
20
1880
TYP.
14.8
50.5
30.6
22.1
40.5
0.85
18.0
506
386
7.9
5.6
8.0
8.9
40
MAX. UNIT CONDITIONS
0.025
0.035
0.95
100
0.5
ns
nC
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
J
J
ISSUE 1 - JULY 2004
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=250 A, V
=250 A, V
=3.5A
=5.9A
GS
=25°C, I
=25°C, I
≅6 , V
=20V, V
=4.5V, I
=2.5V, I
=10V,I
=10V, V
=15V,V
=10V,V
=0V
=10V, I
= 12V, V
GS
D
S
F
GS
GS
=1.9A,
=5.9A
D
=5.1A,
GS
D
D
GS
=5V
GS
DS
=1A
=5.9A
=5A
=5V,
=4.5V,
=0V
DS
=0V,
=0V
= V
=0V
GS

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