ZXMN2A04DN8TC Diodes Zetex, ZXMN2A04DN8TC Datasheet

MOSFET DUAL N-CHAN 20V 8SOIC

ZXMN2A04DN8TC

Manufacturer Part Number
ZXMN2A04DN8TC
Description
MOSFET DUAL N-CHAN 20V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN2A04DN8TC

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 5.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.9A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
40.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
1880pF @ 10V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN2A04DN8TC
Manufacturer:
DIODES/美台
Quantity:
20 000
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMN
2A04D
ISSUE 1 - JULY 2004
DEVICE
ZXMN2A04DN8TA
ZXMN2A04DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
= 20V; R
DS(ON)
REEL
13’‘
7
= 0.025
’‘
WIDTH
12mm
12mm
TAPE
; I
D
= 7.7A
QUANTITY
2500 units
PER REEL
500 units
1
ZXMN2A04DN8
PINOUT
S E M I C O N D U C T O R S
Top view
SO8

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ZXMN2A04DN8TC Summary of contents

Page 1

... converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMN2A04DN8TA 7 12mm ’‘ ZXMN2A04DN8TC 13’‘ 12mm DEVICE MARKING ZXMN 2A04D ISSUE 1 - JULY 2004 ; I = 7.7A D QUANTITY PER REEL 500 units 2500 units 1 ZXMN2A04DN8 ...

Page 2

ZXMN2A04DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) ...

Page 3

ISSUE 1 - JULY 2004 ZXMN2A04DN8 CHARACTERISTICS ...

Page 4

ZXMN2A04DN8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 5

ISSUE 1 - JULY 2004 TYPICAL CHARACTERISTICS 5 ZXMN2A04DN8 ...

Page 6

ZXMN2A04DN8 TYPICAL CHARACTERISTICS 6 ISSUE 1 - JULY 2004 ...

Page 7

PACKAGE OUTLINE D Pin 1 Seating Plane b e CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex Semiconductors plc 2004 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany ...

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