SI4946BEY-T1-E3 Vishay, SI4946BEY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4946BEY-T1-E3
• Description: MOSFET N-CH DUAL 60V 6.5A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4946BEY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 840pF @ 30V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 50 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.041 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 52mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4946BEY-T1-E3TR

Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
30
10
1
- 50 - 25
0
Source-Drain Diode Forward Voltage
0.2
V
0
SD
T
0.4
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 175 °C
25
T
J
- Temperature (°C)
0.6
50
75
0.8
I
D
T
= 250 µA
J
100
= 25 °C
0.01
100
1.0
0.1
10
0.01
1
125
Safe Operating Area, Junction-to-Ambient
* V
1.2
150
GS
Limited by R
> minimum V
1.4
175
V
0.1
DS
- Drain-to-Source Voltage (V)
Single Pulse
DS(on)
T
A
= 25 °C
GS
*
at which R
1
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
25
20
15
10
5
0
0.01
10
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
2
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
100
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S09-2434-Rev. C, 16-Nov-09
Document Number: 73411
10
6
T
I
T
J
D
J
= 150 °C
= 5.3 A
= 25 °C
100
8
1000
10