SI4946BEY-T1-E3 Vishay, SI4946BEY-T1-E3 Datasheet

MOSFET N-CH DUAL 60V 6.5A 8-SOIC

SI4946BEY-T1-E3

Manufacturer Part Number
SI4946BEY-T1-E3
Description
MOSFET N-CH DUAL 60V 6.5A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4946BEY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
41 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
840pF @ 30V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 50 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.041 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.3 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
65A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
52mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4946BEY-T1-E3TR

Available stocks

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Quantity
Price
Part Number:
SI4946BEY-T1-E3
Manufacturer:
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Quantity:
2 000
Part Number:
SI4946BEY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 970
Part Number:
SI4946BEY-T1-E3
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Part Number:
SI4946BEY-T1-E3
Manufacturer:
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Quantity:
20 000
Company:
Part Number:
SI4946BEY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
60
(V)
G
G
S
S
1
1
2
2
0.052 at V
0.041 at V
1
2
3
4
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Dual N-Channel 60-V (D-S) 175 °C MOSFET
Top View
GS
GS
SO-8
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
a, c
8
7
6
5
D
D
D
D
I
D
1
1
2
2
6.5
5.8
(A)
A
= 25 °C, unless otherwise noted
Q
Steady State
9.2 nC
g
T
T
T
L = 0 1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 175 °C Maximum Junction Temperature
• 100 % R
• Compliant to RoHS directive 2002/95/EC
Symbol
Symbol
T
G
R
R
J
Definition
V
V
E
I
I
P
, T
1
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
N-Channel MOSFET
g
Tested
D
S
®
1
1
Power MOSFET
Typical
50
33
- 55 to 175
G
5.3
4.4
2.4
1.7
2
Limit
± 20
2
6.5
5.5
3.1
7.2
3.7
2.6
60
30
12
a, b
N-Channel MOSFET
a, b
a, b
a, b
a, b
Maximum
62.5
41
Vishay Siliconix
D
S
2
2
Si4946BEY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4946BEY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free) Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4946BEY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73411 S09-2434-Rev. C, 16-Nov- thru 2.0 2.5 3 Si4946BEY Vishay Siliconix 150 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 1200 1000 C iss 800 600 400 200 C oss C rss ...

Page 4

... Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 175 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µA D 100 ...

Page 5

... L · 0.000001 0.00001 0.0001 T - Time In Avalanche (s) A Single Pulse Avalanche Capability = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4946BEY Vishay Siliconix 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 100 125 T - Case Temperature (°C) ...

Page 6

... Si4946BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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