SI4559ADY-T1-GE3 Vishay, SI4559ADY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4559ADY-T1-GE3
• Description: MOSFET N/P-CH 60V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4559ADY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ N Channel or 3 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4559ADY-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
20
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
T
Threshold Voltage
J
- Temperature (°C)
25
0.6
T
J
50
= 150 °C
0.8
I
D
75
= 250 µA
0.001
0.01
100
0.1
10
T
1
J
1.0
0.1
100
= 25 °C
Limited by R
* V
GS
1.2
125
Single Pulse
T
>
A
V
minimum V
= 25 °C
DS
1.4
150
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
*
GS
at which R
DS(on)
10
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
25
20
15
10
5
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
100 µs
0.1
100
2
V
GS
- Gate-to-Source V oltage (V)
1
4
Time (s)
Vishay Siliconix
Si4559ADY
10
6
I
D
= 4.3 A
www.vishay.com
100
8
1000
10
5