SI4559ADY-T1-GE3 Vishay, SI4559ADY-T1-GE3 Datasheet - Page 10

MOSFET N/P-CH 60V 8-SOIC

SI4559ADY-T1-GE3

Manufacturer Part Number
SI4559ADY-T1-GE3
Description
MOSFET N/P-CH 60V 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4559ADY-T1-GE3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4.3A, 3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
665pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.058 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A @ N Channel or 3 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
46mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4559ADY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4559ADY-T1-GE3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4559ADY-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
57 461
Part Number:
SI4559ADY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4559ADY-T1-GE3
Quantity:
70 000
Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
- Case Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
125
50
150
T
C
Current Derating*
- Case Temperature (°C)
75
100
100
10
1
0.000001
125
T
A
=
Single Pulse Avalanche Capability
BV - V
150
L . I
0.00001
T
A
D
- Time In Avalanche (s)
DD
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
0.0001
0.001

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