ZXMD63P02XTC Diodes Zetex, ZXMD63P02XTC Datasheet

MOSFET DUAL P-CHAN 20V 8MSOP

ZXMD63P02XTC

Manufacturer Part Number
ZXMD63P02XTC
Description
MOSFET DUAL P-CHAN 20V 8MSOP
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMD63P02XTC

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
5.25nC @ 4.5V
Input Capacitance (ciss) @ Vds
290pF @ 15V
Power - Max
870mW
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - JUNE 2004
DEVICE
ZXMD63P02XTA
ZXMD63P02XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ZXM63P02
=-20V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.27 ; I
TAPE WIDTH (mm)
12mm embossed
12mm embossed
D
=-1.7A
1
QUANTITY
PER REEL
1000 units
4000 units
ZXMD63P02X
MSOP8
Top View

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ZXMD63P02XTC Summary of contents

Page 1

... Low gate drive Low profile SOIC package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXMD63P02XTA 7 ZXMD63P02XTC 13 DEVICE MARKING ZXM63P02 ISSUE 1 - JUNE 2004 =-1.7A D TAPE WIDTH (mm) QUANTITY PER REEL 12mm embossed 1000 units 12mm embossed ...

Page 2

ZXMD63P02X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T =25°C ...

Page 3

Refer Note ( 100ms 10ms 1ms 100µs 0.1 0 Drain-Source Voltage (V) DS Safe Operating Area 120 Refer Note (b) 100 80 60 D=0.5 40 D=0.2 20 D=0.1 D=0.05 Single Pulse 0 ...

Page 4

ZXMD63P02X ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

C 4. 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 10 VDS=-10V T=150 C T= 0.1 1 1 Gate-Source Voltage (V) GS Typical Transfer Characteristics 10 ...

Page 6

ZXMD63P02X 700 600 500 400 300 200 100 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 TYPICAL CHARACTERISTICS 5 Vgs=0V f=1Mhz 4.5 ...

Page 7

ZXMD63P02X PACKAGE DIMENSIONS Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 ...

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