ZXMD63C03XTC Diodes Zetex, ZXMD63C03XTC Datasheet

MOSFET N/P-CHAN DUAL 30V 8MSOP

ZXMD63C03XTC

Manufacturer Part Number
ZXMD63C03XTC
Description
MOSFET N/P-CHAN DUAL 30V 8MSOP
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMD63C03XTC

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A, 2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
290pF @ 25 V
Power - Max
1.04W
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
N-CHANNEL: V
P-CHANNEL: V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXM63C03
ISSUE 2 - SEPTEMBER 2007
DEVICE
ZXMD63C03XTA
ZXMD63C03XTC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
(BR)DSS
(BR)DSS
REEL SIZE
=-30V; R
=
(inches)
30V; R
13
7
DS(ON)
DS(ON)
=0.185
=
0.135 ; I
12 embossed
12 embossed
TAPE WIDTH
(mm)
;
I
D
D
=-2.0A
=
2.3A
1
QUANTITY
PER REEL
1,000
4,000
N-channel
ZXMD63C03X
P-channel
Top view
Pin-out
MSOP8

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ZXMD63C03XTC Summary of contents

Page 1

... Low gate drive • Low profile SOIC package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXMD63C03XTA 7 ZXMD63C03XTC 13 DEVICE MARKING ZXM63C03 ISSUE 2 - SEPTEMBER 2007 = = 0.135 ; I 2. =0.185 I =-2.0A D N-channel TAPE WIDTH QUANTITY ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V; T =25°C)(b)( =4.5V; T =70°C)(b)( Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation ...

Page 3

ISSUE 2 - SEPTEMBER 2007 N-CHANNEL CHARACTERISTICS 3 ZXMD63C03X ...

Page 4

ISSUE 2 - SEPTEMBER 2007 P-CHANNEL CHARACTERISTICS 4 ZXMD63C03X ...

Page 5

N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) R Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) ...

Page 6

N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2007 ZXMD63C03X 6 ...

Page 7

ISSUE 2 - SEPTEMBER 2007 N-CHANNEL CHARACTERISTICS 7 ZXMD63C03X ...

Page 8

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 9

ISSUE 2 - SEPTEMBER 2007 P-CHANNEL CHARACTERISTICS 9 ZXMD63C03X ...

Page 10

P-CHANNEL TYPICAL CHARACTERISTICS A ISSUE 2 - SEPTEMBER 2007 ZXMD63C03X 10 ...

Page 11

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

Page 12

PACKAGE DIMENSIONS DIM Millimeters Min. Max. Min 1.10 A1 0.05 0.15 0.002 A2 0.75 0.95 0.0295 b 0.25 0.40 0.010 c 0.13 0.23 0.005 D 2.90 3.10 0.114 E ...

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