SI6544BDQ-T1-GE3 Vishay, SI6544BDQ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI6544BDQ-T1-GE3
• Description: MOSFET N/P-CH 30V 8-TSSOP
• Manufacturer: Vishay

Specifications of SI6544BDQ-T1-GE3

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.7A, 3.8A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si6544BDQ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
10
8
4
0
8
6
4
2
0
0.0
0
0
V
I
D
DS
= 3.8 A
= 15 V
On-Resistance vs. Drain Current
V
3.2
1
GS
4
V
DS
Q
= 4.5 V
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
GS
- Total Gate Charge (nC)
I
D
= 10 thru 5 V
- Drain Current (A)
Gate Charge
6.4
2
8
12
9.6
3
4 V
V
GS
3 V
12.8
16
4
= 10 V
16.0
20
5
1100
1.6
1.4
1.2
1.0
0.8
0.6
880
660
440
220
20
16
12
8
4
0
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 3.8 A
C
= 10 V
rss
1.0
V
6
T
GS
0
J
Transfer Characteristics
V
- Junction Temperature (°C)
DS
- Gate-to-Source Voltage (V)
1.5
- Drain-to-Source Voltage (V)
25
Capacitance
C
12
oss
2.0
25 °C
C
T
iss
50
C
S-81056-Rev. B, 12-May-08
= 125 °C
Document Number: 72244
2.5
18
75
3.0
100
- 55 °C
3.5
24
125
4.0
150
4.5
30