SI6544BDQ-T1-GE3 Vishay, SI6544BDQ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI6544BDQ-T1-GE3
• Description: MOSFET N/P-CH 30V 8-TSSOP
• Manufacturer: Vishay

Specifications of SI6544BDQ-T1-GE3

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.7A, 3.8A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72244
S-81056-Rev. B, 12-May-08
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square
10
Square Wave Pulse Duration (s)
-2
10
Wave Pulse Duration (s)
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
A
1
= P
Vishay Siliconix
t
2
DM
Si6544BDQ
Z
thJA
100
thJA
t
t
1
2
(t)
= 120 °C/W
www.vishay.com
600
10
5