SI6544BDQ-T1-E3 Vishay, SI6544BDQ-T1-E3 Datasheet - Page 8

MOSFET N/P-CH 30V 8-TSSOP

SI6544BDQ-T1-E3

Manufacturer Part Number
SI6544BDQ-T1-E3
Description
MOSFET N/P-CH 30V 8-TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6544BDQ-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.7A, 3.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Resistance Drain-source Rds (on)
0.032 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.7 A @ N Channel or 3.8 A @ P Channel
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI6544BDQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6544BDQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI6544BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
3 182
Company:
Part Number:
SI6544BDQ-T1-E3
Quantity:
70 000
Si6544BDQ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72244.
www.vishay.com
8
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square
10
Square Wave Pulse Duration (s)
-2
10
Wave Pulse Duration (s)
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S-81056-Rev. B, 12-May-08
= P
t
Document Number: 72244
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 120 °C/W
600
10

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