SI6544BDQ-T1-E3 Vishay, SI6544BDQ-T1-E3 Datasheet - Page 6
![MOSFET N/P-CH 30V 8-TSSOP](/photos/5/42/54235/pkg_5844_sml.jpg)
SI6544BDQ-T1-E3
Manufacturer Part Number
SI6544BDQ-T1-E3
Description
MOSFET N/P-CH 30V 8-TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI6544BDQ-T1-E3.pdf
(9 pages)
Specifications of SI6544BDQ-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.7A, 3.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Resistance Drain-source Rds (on)
0.032 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.7 A @ N Channel or 3.8 A @ P Channel
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI6544BDQ-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6544BDQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Company:
Part Number:
SI6544BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
3 182
Si6544BDQ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
10
8
4
0
8
6
4
2
0
0.0
0
0
V
I
D
DS
= 3.8 A
= 15 V
On-Resistance vs. Drain Current
V
3.2
1
GS
4
V
DS
Q
= 4.5 V
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
GS
- Total Gate Charge (nC)
I
D
= 10 thru 5 V
- Drain Current (A)
Gate Charge
6.4
2
8
12
9.6
3
4 V
V
GS
3 V
12.8
16
4
= 10 V
16.0
20
5
1100
1.6
1.4
1.2
1.0
0.8
0.6
880
660
440
220
20
16
12
8
4
0
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 3.8 A
C
= 10 V
rss
1.0
V
6
T
GS
0
J
Transfer Characteristics
V
- Junction Temperature (°C)
DS
- Gate-to-Source Voltage (V)
1.5
- Drain-to-Source Voltage (V)
25
Capacitance
C
12
oss
2.0
25 °C
C
T
iss
50
C
S-81056-Rev. B, 12-May-08
= 125 °C
Document Number: 72244
2.5
18
75
3.0
100
- 55 °C
3.5
24
125
4.0
150
4.5
30