SI4910DY-T1-E3 Vishay, SI4910DY-T1-E3 Datasheet - Page 5

MOSFET N-CH DUAL 40V 7.6A 8-SOIC

SI4910DY-T1-E3

Manufacturer Part Number
SI4910DY-T1-E3
Description
MOSFET N-CH DUAL 40V 7.6A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4910DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
855pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.027 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4910DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4910DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 954
Part Number:
SI4910DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
– Case Temperature (°C)
50
75
J(max)
10
8
6
4
2
0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
T
C
150
Current Derating*
50
– Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
Power Derating, Junction-to-Ambient
150
25
T
A
– Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4910DY
www.vishay.com
125
150
5

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