SI4910DY-T1-E3 Vishay, SI4910DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4910DY-T1-E3
• Description: MOSFET N-CH DUAL 40V 7.6A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4910DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 855pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4910DY-T1-E3TR

Si4910DY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
V
V
Pulse Diode Forward Current
Body Diode Voltage
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
a
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
I
I
C
t
V
D(on)
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
d(off)
GSS
I
DSS
d(on)
Q
DS
g
Q
R
I
SM
t
t
t
t
t
DS
oss
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
f
r
f
g
g
rr
/T
/T
J
J
I
F
V
V
V
V
I
= 5 A, dI/dt = 100 A/µs, T
I
DS
D
DS
D
DS
DS
≅ 5 A, V
≅ 5 A, V
= 20 V, V
= 40 V, V
V
= 20 V, V
V
= 20 V, V
V
V
V
V
DS
V
V
V
V
DS
GS
GS
DS
DS
DD
DD
Test Conditions
GS
DS
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 40 V, V
= 5 V, V
I
= 20 V, R
= 20 V, R
GEN
= 10 V, I
= 15 V, I
T
D
GEN
f = 1 MHz
I
S
C
= 250 µA
GS
GS
GS
GS
GS
= 1.5 A
= 25 °C
= 4.5 V, R
, I
= 10 V, R
= 0 V, I
= 0 V, T
D
GS
= 4.5 V, I
= 10 V, I
D
GS
= 250 µA
D
= 250 µA
GS
D
D
L
= ± 16 V
L
= 4.8 A
= 10 V
= 6 A
= 6 A
= 4 Ω
=4 Ω
= 0 V
D
J
= 1 MHz
g
g
D
= 55 °C
D
J
= 1 Ω
= 1 Ω
= 5 A
= 25 °C
= 5 A
Min.
0.6
40
20
0.022
0.026
Typ.
0.73
855
105
9.6
2.3
3.2
2.5
37
- 5
20
65
21
11
24
12
60
22
26
21
13
13
6
6
5
S09-0540-Rev. B, 06-Apr-09
Document Number: 73699
a
0.027
0.032
Max.
14.5
100
2.0
3.8
2.6
1.2
10
32
12
20
36
12
20
90
33
10
20
40
32
1
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
Ω
V
V
A
S
Ω
A
V