SI3588DV-T1-E3 Vishay, SI3588DV-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI3588DV-T1-E3
• Description: MOSFET N/P-CH 20V 2.5/.57A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3588DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 570mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A @ N Channel or 0.57 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3588DV-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71332.
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
-2
Square Wave Pulse Duration (s)
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
DM
2
Z
Vishay Siliconix
thJA
thJA
100
(t)
t
t
1
2
= 130 °C/W
Si3588DV
www.vishay.com
600
10
7