SI3588DV-T1-E3 Vishay, SI3588DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3588DV-T1-E3
• Description: MOSFET N/P-CH 20V 2.5/.57A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3588DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 570mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A @ N Channel or 0.57 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3588DV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 3.0 A
On-Resistance vs. Drain Current
= 10 V
1
1
2
V
V
DS
GS
Output Characteristics
V
Q
- Drain-to-Source Voltage (V)
= 4.5 V thru 2 V
GS
g
I
D
- Total Gate Charge (nC)
Gate Charge
= 1.8 V
- Drain Current (A)
2
2
4
3
3
6
1.5 V
V
V
GS
GS
4
4
= 4.5 V
8
= 2.5 V
10
5
5
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
= 3.0 A
0.5
4
= 4.5 V
V
V
DS
C
0
Transfer Characteristics
T
GS
oss
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
1.0
8
T
50
Vishay Siliconix
C
C
25 °C
iss
= - 55 °C
1.5
12
75
Si3588DV
www.vishay.com
100
2.0
16
125 °C
125
150
2.5
20
3