SIA511DJ-T1-GE3 Vishay, SIA511DJ-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SIA511DJ-T1-GE3
• Description: MOSFET N/P-CH 12V PWRPAK SC70-6
• Manufacturer: Vishay

Specifications of SIA511DJ-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 8V
• Input Capacitance (ciss) @ Vds: 400pF @ 6V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 13 S, 9 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A @ N Channel or 4.3 A @ P Channel
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 33mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA511DJ-T1-GE3TR

SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
= 4.3 A
0.4
2
V
DS
2
Output Characteristics
V
Q
GS
- Drain-to-Source Voltage (V)
g
- Total Gate Charge (nC)
I
= 1.8 V
D
Gate Charge
0.8
- Drain Current (A)
4
4
V
V
GS
V
GS
DS
1.2
6
= 2.5 V
= 4.5 V
V
= 6 V
GS
= 5 thru 2.5 V
V
V
V
GS
6
GS
DS
1.6
8
= 1.5 V
= 2 V
= 9.6 V
New Product
2.0
10
8
700
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
C
I
D
On-Resistance vs. Junction Temperature
rss
- 25
= 3.3 A
2
0.3
V
V
C
Transfer Characteristics
GS
DS
0
T
oss
T
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
V
= 125 °C
4
GS
25
T
Capacitance
0.6
C
= 4.5 V, 2.5 V, 1.8 V
C
= 25 °C
iss
50
6
S-80436-Rev. B, 03-Mar-08
Document Number: 74592
0.9
75
8
T
100
C
= - 55 °C
1.2
10
125
150
1.5
12