SIA511DJ-T1-GE3 Vishay, SIA511DJ-T1-GE3 Datasheet - Page 10

MOSFET N/P-CH 12V PWRPAK SC70-6

SIA511DJ-T1-GE3

Manufacturer Part Number
SIA511DJ-T1-GE3
Description
MOSFET N/P-CH 12V PWRPAK SC70-6
Manufacturer
Vishay
Datasheet

Specifications of SIA511DJ-T1-GE3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 4.2A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.5A, 4.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 8V
Input Capacitance (ciss) @ Vds
400pF @ 6V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.04 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
13 S, 9 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.5 A @ N Channel or 4.3 A @ P Channel
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
33mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA511DJ-T1-GE3TR
SiA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
10
8
6
4
2
0
0
Package Limited
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
8
6
4
2
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S-80436-Rev. B, 03-Mar-08
Document Number: 74592
100
125
150

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