SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 3
![MOSFET N/P-CH 30V 2.5/1.8A 6TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3552DV-T1-E3
Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3552DV-T1-E3.pdf
(8 pages)
2.SI3552DV-T1-E3.pdf
(5 pages)
3.SI3552DV-T1-E3.pdf
(8 pages)
Specifications of SI3552DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A @ N Channel or 1.8 A @ P Channel
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
51A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3552DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 1.8 A
1
= 15 V
On-Resistance vs. Drain Current
1
V
V
GS
DS
1
Q
Output Characteristics
= 4.5 V
2
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
V
2
GS
3
2 V
= 10 V thru 5 V
2
4
3
V
4 V
GS
5
3
3 V
= 10 V
4
6
5
4
7
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
10
0
8
6
4
2
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
= 2.5 A
5
1
V
= 10 V
V
T
DS
C
J
GS
Transfer Characteristics
0
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
2
25
Capacitance
C
iss
15
50
3
Vishay Siliconix
T
25 °C
C
= - 55 °C
75
Si3552DV
20
4
www.vishay.com
100
125 °C
25
5
125
150
30
6
3