SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 2
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SI3552DV-T1-E3
Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3552DV-T1-E3.pdf
(8 pages)
2.SI3552DV-T1-E3.pdf
(5 pages)
3.SI3552DV-T1-E3.pdf
(8 pages)
Specifications of SI3552DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A @ N Channel or 1.8 A @ P Channel
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
51A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3552DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Si3552DV
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
V
V
I
DS
V
V
D
DS
I
DS
D
DS
≅ - 1 A, V
I
F
I
= - 15 V, V
F
≅ 1 A, V
= - 24 V, V
V
V
V
V
V
= - 1.05 A, dI/dt = 100 A/µs
V
= 24 V, V
V
V
V
I
= 15 V, V
= 1.05 A, dI/dt = 100 A/µs
V
GS
S
V
DS
V
V
V
V
I
DS
GS
DS
DS
S
DD
DS
DS
GS
DD
DS
DS
GS
DS
= - 1.05 A, V
= 1.05 A, V
= V
= - 5 V, V
= - 4.5 V, I
= - 10 V, I
= - 15 V, I
= 0 V, V
= V
= - 24 V, V
= - 15 V, R
= 4.5 V, I
= 24 V, V
= 5 V, V
= 15 V, R
= 10 V, I
= 10 V, I
N-Channel
N-Channel
P-Channel
GEN
P-Channel
GEN
GS
Test Conditions
GS
GS
GS
GS
GS
, I
, I
= 10 V, R
= - 10 V, R
= - 5 V, I
D
= 0 V, T
GS
= 5 V, I
D
= 0 V, T
GS
GS
= - 250 µA
D
D
D
D
D
D
= 250 µA
GS
GS
L
GS
GS
L
= ± 20 V
= 2.5 A
= - 1.8 A
= 2.5 A
= - 1.8 A
= 2.0 A
= - 1.2 A
= 10 V
= - 10 V
= 15 Ω
= 15 Ω
= 0 V
= 0 V
= 0 V
= 0 V
D
J
D
J
g
= 55 °C
= 1.8 A
= 55 °C
= - 1.8 A
g
= 6 Ω
= 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 1.0
1.0
0.5
- 5
5
3
S09-2110-Rev. C, 12-Oct-09
0.085
0.165
0.140
0.298
- 0.83
Document Number: 70971
Typ.
0.81
4.3
2.4
2.1
2.4
0.7
0.9
0.7
0.8
12
13
12
35
30
7
8
9
5
7
- 1.10
± 100
± 100
0.105
0.200
0.175
0.360
Max.
1.10
3.2
3.6
2.4
- 1
- 5
11
11
12
14
18
20
18
11
60
60
1
5
8
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V