SI1970DH-T1-E3 Vishay, SI1970DH-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1970DH-T1-E3
• Description: MOSFET N-CH DUAL 30V 1.3A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1970DH-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 3.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 95pF @ 15V
• Power - Max: 740mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 345mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1970DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
2.0
1.6
1.2
0.8
0.4
0.0
0
Package Limited
25
D
is based on T
T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si1970DH
www.vishay.com
125
150
5