SI1970DH-T1-E3 Vishay, SI1970DH-T1-E3 Datasheet

MOSFET N-CH DUAL 30V 1.3A SC70-6

SI1970DH-T1-E3

Manufacturer Part Number
SI1970DH-T1-E3
Description
MOSFET N-CH DUAL 30V 1.3A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1970DH-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
225 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1.6V @ 250µA
Gate Charge (qg) @ Vgs
3.8nC @ 10V
Input Capacitance (ciss) @ Vds
95pF @ 15V
Power - Max
740mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
N Channel
Continuous Drain Current Id
1.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
345mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1970DH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1970DH-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
40 880
Part Number:
SI1970DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
G
D
Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free)
S
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
1
1
2
V
DS
30
1
2
3
(V)
SC-70 (6-LEADS)
SOT-363
Top
View
0.225 at V
0.345 at V
Si1970DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
6
5
4
GS
GS
D
G
S
(Ω)
J
= 4.5 V
= 2.5 V
1
2
2
= 150 °C)
b, f
Dual N-Channel 30 V (D-S) MOSFET
I
D
Marking Code
1.3
1.3
(A)
CD XX
a
a
a
d, e
A
Part # Code
= 25 °C, unless otherwise noted
Q
1.15 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
Lot Traceability
and Date Code
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Applications
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
G
1
N-Ch a nnel MO S FET
®
Power MOSFET
Typical
130
80
D
S
1
1
- 55 to 150
0.74
0.47
Limit
0.61
± 12
1.3
1.3
1.3
1.25
260
1.1
1.0
0.8
30
4
b, c
b, c
a
a
a
c
Maximum
170
100
Vishay Siliconix
G
2
N-Ch a nnel MO S FET
Si1970DH
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1970DH-T1-E3

SI1970DH-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si1970DH-T1-E3 (Lead (Pb)-free) Si1970DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1970DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 74343 S10-0721-Rev. B, 29-Mar 2.0 2 2.0 2.5 Si1970DH Vishay Siliconix 2.0 1.6 1.2 0 ° 125 ° °C C 0.0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 150 120 C iss ...

Page 4

... Si1970DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 1.0 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage 1.5 1.3 1.1 0.9 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ 100 125 150 10 * Limited by R ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74343 S10-0721-Rev. B, 29-Mar-10 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1970DH Vishay Siliconix 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ...

Page 6

... Si1970DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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