SI1553DL-T1-E3 Vishay, SI1553DL-T1-E3 Datasheet - Page 6
![MOSFET N/P-CH 20V SC70-6](/photos/5/42/54224/sot-363_pkg_sml.jpg)
SI1553DL-T1-E3
Manufacturer Part Number
SI1553DL-T1-E3
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1553DL-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA, 410mA
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.385 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.66 A @ N Channel or 0.41 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
995mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1553DL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1553DL-T1-E3
Manufacturer:
CRUSTRL
Quantity:
6
Part Number:
SI1553DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.vishay.com
2-6
Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.1
-0.2
0.4
0.3
0.2
0.1
0.0
0.1
5
4
3
2
1
0
1
-50
0.0
0.0
V
I
D
-25
Source-Drain Diode Forward Voltage
DS
0.2
= 0.41 A
0.2
= 10 V
V
SD
0
Q
0.4
g
T
Threshold Voltage
- Source-to-Drain Voltage (V)
0.4
J
- Total Gate Charge (nC)
T
J
- Temperature (_C)
25
= 150_C
Gate Charge
0.6
0.6
50
I
D
0.8
= 250 mA
75
0.8
1.0
100
T
J
1.0
= 25_C
1.2
125
150
1.4
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
10
-50
0
- 3
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
-25
D
GS
10
= 0.41 A
- 2
= 4.5 V
1
T
V
0
J
GS
10
- Junction Temperature (_C)
- 1
Single Pulse Power
- Gate-to-Source Voltage (V)
25
Time (sec)
2
50
1
S-21374—Rev. D, 12-Aug-02
Document Number: 71078
I
3
D
75
10
= 0.41 A
P−CHANNEL
100
4
100
125
600
150
5