SI1553DL-T1-E3 Vishay, SI1553DL-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1553DL-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1553DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA, 410mA
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.66 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 995mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1553DL-T1-E3TR

Document Number: 71078
S-21374—Rev. D, 12-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
0.0
0.0
2
1
10
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.5
On-Resistance vs. Drain Current
0.2
V
Single Pulse
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
I
GS
1.0
D
- Drain Current (A)
= 2.5 V
0.4
1 V
10
1.5
V
- 3
GS
0.6
Normalized Thermal Transient Impedance, Junction-to-Foot
= 5 thru 3 V
2.0
V
V
2.5 V
1.5 V
GS
GS
2 V
0.8
= 3.6 V
= 4.5 V
2.5
Square Wave Pulse Duration (sec)
10
1.0
3.0
- 2
10
- 1
100
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
0.0
0
C
rss
0.5
V
4
GS
V
Transfer Characteristics
DS
C
- Gate-to-Source Voltage (V)
oss
1.0
- Drain-to-Source Voltage (V)
1
Capacitance
8
Vishay Siliconix
1.5
C
T
iss
C
= -55_C
25_C
12
Si1553DL
2.0
N−CHANNEL
P−CHANNEL
www.vishay.com
16
2.5
125_C
10
3.0
20
2-5