BSO203P Infineon Technologies, BSO203P Datasheet

MOSFET DUAL P-CH 20V 8.2A 8-SOIC

BSO203P

Manufacturer Part Number
BSO203P
Description
MOSFET DUAL P-CH 20V 8.2A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO203P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
1.2V @ 100µA
Gate Charge (qg) @ Vgs
48.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
2242pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.021 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO203PINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO203P
Manufacturer:
INFINEON
Quantity:
5 510
OptiMOS
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Type
BSO203P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Rev.1.2
A
A
A
A
=-8.2A, V
=-8.2 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
TM
=-16V, di/dt=200A/µs, T
=-10V, R
-P Power-Transistor
Package
P-SO 8
GS
=25Ω
j
= 25 °C, unless otherwise specified
jmax
=150°C
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
G2
G1
S2
S1
1
2
3
4
Top View
-55... +150
55/150/56
Product Summary
V
R
I
8
7
6
5
D
Value
SIS00070
-32.8
DS
DS(on)
-8.2
-6.6
±12
97
-6
D1
D1
D2
D2
2
2002-01-08
-8.2
BSO203P
-20
21
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for BSO203P

BSO203P Summary of contents

Page 1

... Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 Symbol puls E AS dv/dt =150°C jmax tot stg Page 1 BSO203P Product Summary V - DS(on Top View SIS00070 Value -8.2 -6 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO203P Values Unit min. typ. max K 110 - - 62.5 Values Unit min. typ. max. - -0.6 ...

Page 3

... I =-1A, R =6Ω d(off =-15V, I =-8. =-15V, I =-8.2A -4. (plateau) V =-15V, I =-8. =25° =0, I =8. =-10V /dt=100A/µ Page 3 BSO203P Values Unit min. typ. max 2242 - pF - 852 - - 690 - - 15.5 23 25.9 38 88 -3.5 -5 -15.1 -22.6 - -32.4 -48 -32.8 - 0.85 1 35.7 44 18.7 23.4 nC 2002-01-08 ...

Page 4

... A 2 BSO203P - -10 0 -10 -1 - -10 -10 Rev.1.2 2 Drain current parameter: |V -10 A °C 100 120 160 Transient thermal impedance Z thJS parameter : K 120.0µ - Page |≥ 4 BSO203P - 100 = BSO203P single pulse - BSO203P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2002-01-08 ...

Page 5

... Rev.1.2 6 Typ. drain-source on resistance R DS(on) parameter: V 0.03 Ω Vgs = -3V 0.02 0.015 Vgs = -2.5V 0.01 Vgs = -2V 0.005 Typ. forward transconductance | f(I DS(on)max fs parameter µ Page Vgs = -2.5V Vgs = -3V Vgs = -4V Vgs = -4.5V Vgs = -5V Vgs = -6V Vgs = -8V Vgs = -10V =25° BSO203P Vgs = -3. 2002-01-08 ...

Page 6

... Forward character. of reverse diode parameter - iss -10 C oss C -10 rss - Page -100 µ -60 - 100 ) µ BSO203P °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 2 2002-01-08 BSO203P 98% typ. 2% °C 160 ...

Page 7

... Drain-source breakdown voltage (BR)DSS j BSO203P -24.5 V -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 - Rev.1.2 14 Typ. gate charge |V GS parameter: I 100 °C 150 T j 100 °C 180 T j Page Gate = -8.2 A pulsed 0.2 VDS max. 7 0.5 VDS max. 0.8 VDS max BSO203P Gate | 2002-01-08 ...

Page 8

... Rev.1.2 Page 8 BSO203P 2002-01-08 ...

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