ZXMC4559DN8TA Diodes Zetex, ZXMC4559DN8TA Datasheet - Page 6

• Manufacturer Part Number: ZXMC4559DN8TA
• Description: MOSFET N/P-CHAN DUAL 60V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMC4559DN8TA

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.6A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 20.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 1063pF @ 30V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC4559DN8TR

ZXMC4559DN8
S E M I C O N D U C T O R S
1000
0.01
0.01
0.01
100
0.1
0.1
0.1
10
10
10
1
1
1
On-Resistance v Drain Current
0.01
T = 25°C
Typical Transfer Characteristics
0.1
2.5V
V
V
2
T = 150°C
DS
Output Characteristics
GS
I
Drain-Source Voltage (V)
D
Gate-Source Voltage (V)
V
Drain Current (A)
0.1
GS
3
1
3V
N-CHANNEL TYPICAL CHARACTERISTICS
10V
T = 25°C
1
V
3.5V
DS
4
T = 25°C
= 10V
10
4V
10
4.5V
2.5V
3.5V
V
3V
4V
4.5V
10V
GS
5
6
0.01
Source-Drain Diode Forward Voltage
0.01
0.1
1.4
1.2
1.0
0.8
0.6
0.4
100
10
0.1
10
1
-50
0.2
Normalised Curves v Temperature
1
T = 150°C
0.1
Tj Junction Temperature (°C)
V
V
DS
Output Characteristics
SD
0.4
Drain-Source Voltage (V)
Source-Drain Voltage (V)
0
T = 150°C
0.6
1
V
I
V
I
D
D
GS
GS
10V
= 250uA
50
= 4.5A
= V
= 10V
DS
0.8
ISSUE 5 - MAY 2005
T = 25°C
100
4.5V
10
1.0
R
V
3.5V
2.5V
DS(on)
4V
V
2V
GS(th)
3V
GS
150
1.2