ZXMC4559DN8TA Diodes Zetex, ZXMC4559DN8TA Datasheet - Page 4

MOSFET N/P-CHAN DUAL 60V 8SOIC

ZXMC4559DN8TA

Manufacturer Part Number
ZXMC4559DN8TA
Description
MOSFET N/P-CHAN DUAL 60V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC4559DN8TA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.6A, 2.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
20.4nC @ 10V
Input Capacitance (ciss) @ Vds
1063pF @ 30V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC4559DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC4559DN8TA
Manufacturer:
DIODES/美台
Quantity:
20 000
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMC4559DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
300 s. Duty cycle
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated).
2% .
4
MIN.
1.0
60
TYP.
1063
10.2
26.2
10.6
11.0
20.4
0.85
21.4
104
3.5
4.1
4.1
5.1
64
22
MAX.
0.055
0.075
100
1.0
1.2
UNIT CONDITIONS.
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
DS
GS
GS
DS
DS
DD
G
DS
DS
J
GS
J
=4.5A
=4.5A
=250 A, V
=250 A, V
GS
=25°C, I
=25°C, I
≅6.0 , V
ISSUE 5 - MAY 2005
=60V, V
=15V,I
=30V, V
=30V,V
=30V,V
=10V, I
=4.5V, I
=0V
=30V, I
= 20V, V
D
S
F
D
GS
GS
=2.2A,
=4.5A
GS
=5.5A,
D
D
GS
GS
=4.5A
GS
DS
=1A
=4.0A
=5V,
=10V,
=10V
=0V
DS
=0V,
= V
=0V
=0V
GS

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