ZXMD63P03XTA Diodes Zetex, ZXMD63P03XTA Datasheet

MOSFET 2P-CH 30V 2A 8-MSOP

ZXMD63P03XTA

Manufacturer Part Number
ZXMD63P03XTA
Description
MOSFET 2P-CH 30V 2A 8-MSOP
Manufacturer
Diodes Zetex
Datasheet
1.ZXMD63P03XTA.pdf (7 pages)

Specifications of ZXMD63P03XTA

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
185 mOhm @ 1.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
870mW
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMD63P03XTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
ZXMD63P03XTA
Manufacturer:
DALLAS
Quantity:
1 851
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
•
•
ORDERING INFORMATION
DEVICE MARKING
ZXM63P03
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMD63P03XTA
ZXMD63P03XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
=-30V; R
DS(ON)
REELSIZE
(inches)
13
7
=0.185V; I
12 embossed
12 embossed
TAPE WIDTH
D
(mm)
=-2.0A
QUANTITY
PER REEL
1
1,000
4,000
N-channel
49
ZXMD63P03X
P-channel
S E M I C O N D U C T O R S
Top view
Pin-out
MSOP8

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ZXMD63P03XTA Summary of contents

Page 1

... Low profile SOIC package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REELSIZE TAPE WIDTH (inches) ZXMD63P03XTA 7 12 embossed ZXMD63P03XTC 13 12 embossed DEVICE MARKING ZXM63P03 ISSUE 1 - OCTOBER 2005 =-2.0A D N-channel QUANTITY (mm) PER REEL ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T ...

Page 3

ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXMD63P03X ...

Page 4

ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On ...

Page 5

ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMD63P03X ...

Page 6

ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 6 ZXMD63P03X ...

Page 7

PACKAGE DETAILS PACKAGE DIMENSIONS DIM Millimeters MIN MAX MIN A 0.91 1.11 0.036 A1 0.10 0.20 0.004 B 0.25 0.36 0.010 C 0.13 0.18 0.005 D 2.95 3.05 0.116 e 0.65NOM ...

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