SI7949DP-T1-E3 Vishay, SI7949DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7949DP-T1-E3
• Description: MOSFET DUAL P-CH 60V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7949DP-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.064 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7949DP-T1-E3TR

Si7949DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
Threshold Voltage
T
D
J
10
= 250 µA
2 5
- Temperature (°C)
-3
5 0
0.001
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
7 5
10
1
0.1
10
100
Limited by R
* V
-2
GS
Single Pulse
T
A
> minimum V
125
= 25 °C
V
DS
DS(on)
Safe Operating Area
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
150
1
*
10
GS
-1
at which R
DS(on)
10
is specified
100
1
80
60
40
20
0
0.001
Single Pulse Power, Junction-to-Ambient
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s
100 s, DC
100
0.01
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
A
Time (s)
1
= P
S09-0223-Rev. B, 09-Feb-09
0.1
t
2
DM
Document Number: 73130
Z
thJA
th J A
100
t
t
1
2
(t)
= 52 °C/W
1
600
10